KI010NDS

Marking：010N；Package：SOT-23-3；N-Channel MOSFET

BSC010NE2LS

Marking：010NE2LS；Package：PG-TDSON-8；OptiMOSTM Power-MOSFET

Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccording

IPF010N04NF2S

Marking：010N04NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPF010N06NF2S

Marking：010N06NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

ISC010N06NM5

Marking：010N06N；Package：PG-TSON-8-3；OptiMOSTM5 Power-Transistor, 60 V

Features •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection

NVMYS010N04CLTWG

Marking：010N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 10.3 m, 38 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS010N04CLTWG

Marking：010N04CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 9.5 m, 43 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS010N04CTWG

Marking：010N04C；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 12 m, 38 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS010N06CLTWG

Marking：010N06CL；Package：LFPAK33；MOSFET - Power, Single N-Channel 60 V, 9.8 m, 51 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

BSC010N04LST

Marking：010N04LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 40 V