丝印：010N；Package：SOT-23-3；N-Channel MOSFET

文件：370.64 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：010NE2LS；Package：PG-TDSON-8；OptiMOSTM Power-MOSFET

Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.5 V • 100 avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according

文件：760.86 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：010N04NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.05197 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：010N06NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.06786 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：010N06N；Package：PG-TSON-8-3；OptiMOSTM5 Power-Transistor, 60 V

Features • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Higher solder joint reliability due to enlarged source interconnection

文件：988.7 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：010N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 10.3 m, 38 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：339.45 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：010N04CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 9.5 m, 43 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：010N04C；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 12 m, 38 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：336.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：010N06CL；Package：LFPAK33；MOSFET - Power, Single N-Channel 60 V, 9.8 m, 51 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：340.21 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：010N04LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 40 V

文件：1.43718 Mbytes 页数：13 Pages

Infineon

英飞凌