NVLJWS011N04CLT1G

Marking：011N；Package：WDFNW6；MOSFET ??Power, Single N-Channel 40 V, 11 m, 37 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVLJWS011N06CLTAG

Marking：011N；Package：WDFNW6；MOSFET - Power, Single N-Channel 60 V, 9 m, 48 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

IPB011N04NF2S

Marking：011N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPP011N03LF2S

Marking：011N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

IPP011N04NF2S

Marking：011N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPTG011N08NM5

Marking：011N08N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 80 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsync.rec.

NCE011N30GU

Marking：011N30GU；Package：DFN5x6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE011N30GUusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications. Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification GeneralFeatures

NVMYS011N04CTWG

Marking：011N04C；Package：LFPAK4；MOSFET – Power, Single N-Channel 40 V, 12 m, 35 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

BSC011N03LST

Marking：011N03LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 30 V

ISC011N03L5S

Marking：011N03L5；Package：PG-TDSON-8；Optimized for high performance Buck converter