丝印：011N；Package：WDFNW6；MOSFET ??Power, Single N-Channel 40 V, 11 m, 37 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：170.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：011N；Package：WDFNW6；MOSFET - Power, Single N-Channel 60 V, 9 m, 48 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：163.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：011N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.04643 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：011N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：838.2 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：011N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：985.64 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：011N08N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 80 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Ideal for high frequency switching and sync. rec.

文件：1.34933 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：011N30GU；Package：DFN5x6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE011N30GU uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features

文件：927.37 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：011N04C；Package：LFPAK4；MOSFET – Power, Single N-Channel 40 V, 12 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：341.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：011N03LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 30 V

文件：1.59225 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：011N03L5；Package：PG-TDSON-8；Optimized for high performance Buck converter

文件：1.32642 Mbytes 页数：13 Pages

Infineon

英飞凌