Power-MOSFET-20V-300V N-Channel Power MOSFET-20V-30V N-Channel Power MOSFET

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.\n Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power • Low RDS(on) \n• Optimized for synchronous rectification\n• Enhanced 175°C capability in SuperSO8;

Infineon

英飞凌

丝印：011N03LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 30 V

文件：1.59225 Mbytes 页数：13 Pages

Infineon

英飞凌

N-Channel Enhancement Mode Power MOSFET

Description The GT011N03ME uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：905.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT011N03TE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：934.61 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT011N03TLE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：965.8 Kbytes 页数：6 Pages

GOFORD

谷峰半导体