丝印：012N06N；Package：TSON-8-3；OptiMOSTM5 Power-Transistor, 60 V

Features • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Higher solder joint reliability due to enlarged source interconnection

文件：906.71 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：012N06N；Package：PG-HSOF-8；OptiMOSTM Power-Transistor, 60 V

文件：1.02236 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：012N06NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.06673 Mbytes 页数：11 Pages

Infineon

英飞凌