| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：012N06N；Package：TSON-8-3；OptiMOSTM5 Power-Transistor, 60 V Features •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：012N06N；Package：PG-HSOF-8；OptiMOSTM Power-Transistor, 60 V | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：012N06NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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