ISL8016IR33Z

Marking：016N；Package：20Ld3x4QFN；6A Low Quiescent Current High Efficiency Synchronous Buck Regulator

6ALowQuiescentCurrentHighEfficiencySynchronousBuckRegulator TheISL8016isahighefficiency,monolithic,synchronousstep-downDC/DCconverterthatcandeliverupto6Acontinuousoutputcurrentfroma2.7Vto5.5Vinputsupply.Theoutputvoltageisadjustablefrom0.6VtoVIN.Withan

ACMS300N10T8-HF

Marking：016N10TH；Package：TOLL；MOSFET

Features -Ultra-lowon-resistanceandgate-charge. -AEC-Q101Qualified. -Advancedshielded-gatetechnology.

BSC016N03LSG

Marking：016N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avala

BSC016N06NSSC

Marking：016N06SC；Package：PG-WSON-8-2；OptiMOSTM Power-MOSFET, 60 V

Features •Doublesidecooledpackage-withlowestJuntion-topthermalresistance •175°Crated •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •High

IPB016N08NF2S

Marking：016N08NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPF016N06NF2S

Marking：016N06NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPF016N10NF2S

Marking：016N10NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPP016N06NF2S

Marking：016N06NS；Package：PG-TO220-3；StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPP016N08NF2S

Marking：016N08NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

NVMYS016N06CTWG

Marking：016N06C；Package：LFPAK4；MOSFET - Power, Single N-Channel 60 V, 16 m, 33 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant