型号：IPT017N12NM6；Package：PG-HSOF-8；OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb-free lead plating; RoHS co

文件：962.24 Kbytes 页数：11 Pages

英飞凌

型号：IPTC017N12NM6；Package：PG-HDSOP-16；OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and Top side cooling • Pb-free

文件：1.38781 Mbytes 页数：11 Pages

英飞凌

型号：IPTG017N12NM6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.33967 Mbytes 页数：11 Pages

英飞凌