017N12N6

型号：IPT017N12NM6；Package：PG-HSOF-8；OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching •Pb-freeleadplating;RoHSco

017N12N6

型号：IPTC017N12NM6；Package：PG-HDSOP-16；OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •OptimizedforhighfrequencyswitchingandTopsidecooling •Pb-free

017N12N6

型号：IPTG017N12NM6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •