丝印：017N12N6；Package：PG-HSOF-8；OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb-free lead plating; RoHS co

文件：962.24 Kbytes 页数：11 Pages

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N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 331A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.7mΩ(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Power Factor Correction (PFC)

文件：350.26 Kbytes 页数：3 Pages

ISC

无锡固电

OptiMOS ™ 6 功率 MOSFET 正常电平 120 V，采用 TOLL 封装

\n优势:\n• Very low on-resistance\n• Very low reverse recovery charge\n• Excellent gate charge x RDS(on)\n• High avalanche energy rating\n• 175°C junction temperature rating\n• Pb-free plating\n• RoHS compliant\n• Halogen-free\n• MSL1 classified;

Infineon

英飞凌

OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and Top side cooling • Pb-free

文件：1.38781 Mbytes 页数：11 Pages

INFINEON

英飞凌

MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.33967 Mbytes 页数：11 Pages

INFINEON

英飞凌