丝印：019N08N5；Package：PG-HSOF-8；OptiMOSTM 5 Power-Transistor, 80 V

Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：679.93 Kbytes 页数：11 Pages

Infineon

英飞凌

业界领先的功率 MOSFET 技术，适用于电信电源和低压驱动器，采用 OptiMOS ™ 5 80V，采用 TO-Leadless (TOLL) 封装

• Optimized for synchronous rectification\n• Ideal for high switching frequency\n• Output capacitance reduction of up to 44%\n• RDS(on) reduction of up to 43% from previous generation\n\n优势:\n• Highest system efficiency\n• Reduced switching and conduction losses\n• Less paralleling required\;

Infineon

英飞凌

OptiMOS짧 5 Power-Transistor, 80 V

文件：1.07842 Mbytes 页数：11 Pages

Infineon

英飞凌

汽车电子连接器

SAMTEC/砷泰

上传：天津市博通航睿技术有限公司

汽车电子连接器

SAMTEC/砷泰

上传：天津市博通航睿技术有限公司