丝印：018N10N5；Package：PG-TO220-3；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features • Ideal for high frequency switching and sync. rec. • N-channel, normal level • Optimized for FOMOSS • Very low on-resistance RDS(on) • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.67985 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：018N10N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 100 V

文件：1.32824 Mbytes 页数：11 Pages

Infineon

英飞凌