丝印：018N10N5；Package：PG-TO220-3；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features • Ideal for high frequency switching and sync. rec. • N-channel, normal level • Optimized for FOMOSS • Very low on-resistance RDS(on) • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.67985 Mbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS ™ 5 功率 MOSFET 100 V，采用 TO-220

\n优势:\n• Less paralleling and cooling required\n• Highest system reliability\n• System cost reduction\n• Low voltage overshoot;

Infineon

英飞凌

N-Channel MOSFET

FEATURES ·Low input capacitance and gate charge ·Low gate input resistance APPLICATIONS ·Switching applications

文件：306.74 Kbytes 页数：2 Pages

ISC

无锡固电

TO-220

INFINEON/英飞凌

上传：深圳市赛特兴科技有限公司

TO220-3

INFINEON/英飞凌

上传：深圳市鼎欣微电子有限公司