丝印：023N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：836.94 Kbytes 页数：12 Pages

Infineon

英飞凌

StrongIRFET ™ 2 功率 MOSFET 30 V，采用 TO-220 封装

StrongIRFET™ 2 power MOSFET 30 V in TO-220 package • General purpose products\n• Excellent robustness\n• Superior price/performance ratio\n• Broad availability at distributors\n• Standard packages and pin-out\n• High manufacturing & supply standards\n\n优势:\n• Addresses a wide range of applications\n• High quality and competitive price\n• Convenient ;

Infineon

英飞凌

MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.44413 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：948.9 Kbytes 页数：13 Pages

Infineon

英飞凌