IPD023N03LF2S芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPD023N03LF2S	文件：948.9 Kbytes Page：13 Pages	丝印：023N03F2；Package：PG-TO252-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 文件：948.9 Kbytes 页数：13 Pages	Infineon 英飞凌	Infineon
IPP023N03LF2S	文件：836.94 Kbytes Page：12 Pages	丝印：023N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 文件：836.94 Kbytes 页数：12 Pages	Infineon 英飞凌	Infineon
ISC023N03LF2S	文件：1.44413 Mbytes Page：14 Pages	丝印：023N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 文件：1.44413 Mbytes 页数：14 Pages	Infineon 英飞凌	Infineon

更多023N03F2供应商更新时间2025-9-21 15:16:00