丝印：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 26.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 27 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体