026N12N6

型号：IPT026N12NM6；Package：PG-HSOF-8；OptiMOS™ 6 Power ‑Transistor, 120 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •ExcellentgatechargexRproduct(FOM)DS(on) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching •Pb‑freeleadplatin

026N12N6

型号：IPTC026N12NM6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •OptimizedforhighfrequencyswitchingandTopsidecooling •Pb-free