型号：IPT026N12NM6；Package：PG-HSOF-8；OptiMOS™ 6 Power ‑Transistor, 120 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x R product (FOM) DS(on) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb‑free lead platin

文件：1.17186 Mbytes 页数：13 Pages

英飞凌

型号：IPTC026N12NM6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and Top side cooling • Pb-free

文件：1.46154 Mbytes 页数：11 Pages

英飞凌