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TF023N04NG

丝印:023N04NG;Package:PDFNWB5X6-8L;N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description T he TF023N04NG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchin

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供应商型号品牌批号封装库存备注价格
24+
QFP32
5000
自己现货
询价
RCD
21+
DIP
6016
只做原装正品,不止网上数量,欢迎电话微信查询!
询价
RCD/达标电子
2518+
DIP
9852
只做原装正品现货或订货假一赔十!
询价
ROHM
25+
DIP-30
18000
原厂直接发货进口原装
询价
ROHM
23+
DIP-30
5000
原装正品,假一罚十
询价
TF
23+
DIP30
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
2023+
5800
进口原装,现货热卖
询价
ROHM/罗姆
25+
DIP30
1030
全新原装正品支持含税
询价
24+
N/A
80000
一级代理-主营优势-实惠价格-不悔选择
询价
更多023N04NG供应商 更新时间2025-9-14 16:01:00