| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：025N15N6；Package：PG-HSOF-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordingtoJ‑STD‑020 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：025N15N6；Package：PG-HDSOP-16；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordingtoJ‑STD‑020 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：025N15N6；Package：PG-HSOG-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordingtoJ‑STD‑020 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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