ZXTP25140BFH

Marking：026；Package：SOT-23；140V, SOT23, PNP medium power transistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip

83026BMI-01LF

Marking：026BI01L；Package：SOIC；Low Skew, 1-to-2 Differential-to-LVCMOS/LVTTL Fanout Buffer

FEATURES •TwoLVCMOS/LVTTLoutputs •DifferentialCLK,nCLKinputpair •CLK,nCLKpaircanacceptthefollowingdifferential inputlevels:LVPECL,LVDS,LVHSTL,HCSL,SSTL •Maximumoutputfrequency:350MHz •Outputskew:15ps(maximum) •Part-to-partskew:600ps(maximum) •Additivep

83026BMI-01LFT

Marking：026BI01L；Package：SOIC；Low Skew, 1-to-2 Differential-to-LVCMOS/LVTTL Fanout Buffer

FEATURES •TwoLVCMOS/LVTTLoutputs •DifferentialCLK,nCLKinputpair •CLK,nCLKpaircanacceptthefollowingdifferential inputlevels:LVPECL,LVDS,LVHSTL,HCSL,SSTL •Maximumoutputfrequency:350MHz •Outputskew:15ps(maximum) •Part-to-partskew:600ps(maximum) •Additivep

IPB026N10NF2S

Marking：026N10NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPF026N15NM6

Marking：026N15N6；Package：PG-TO263-7；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordingtoJ‑STD‑020

IPP026N04NF2S

Marking：026N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPP026N10NF2S

Marking：026N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPT026N12NM6

Marking：026N12N6；Package：PG-HSOF-8；OptiMOS™ 6 Power ‑Transistor, 120 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •ExcellentgatechargexRproduct(FOM)DS(on) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching •Pb‑freeleadplatin

IPTC026N12NM6

Marking：026N12N6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •OptimizedforhighfrequencyswitchingandTopsidecooling •Pb-free

83026BMI-01LF

Marking：026BI01L；Package：SOIC；Differential-to-LVCMOS/LVTTL Fanout Buffer