丝印：026；Package：SOT-23；140V, SOT23, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

文件：388.02 Kbytes 页数：6 Pages

Zetex

丝印：026BI01L；Package：SOIC；Low Skew, 1-to-2 Differential-to-LVCMOS/LVTTL Fanout Buffer

FEATURES • Two LVCMOS / LVTTL outputs • Differential CLK, nCLK input pair • CLK, nCLK pair can accept the following differential input levels: LVPECL, LVDS, LVHSTL, HCSL, SSTL • Maximum output frequency: 350MHz • Output skew: 15ps (maximum) • Part-to-part skew: 600ps (maximum) • Additive p

文件：372.16 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：026BI01L；Package：SOIC；Low Skew, 1-to-2 Differential-to-LVCMOS/LVTTL Fanout Buffer

FEATURES • Two LVCMOS / LVTTL outputs • Differential CLK, nCLK input pair • CLK, nCLK pair can accept the following differential input levels: LVPECL, LVDS, LVHSTL, HCSL, SSTL • Maximum output frequency: 350MHz • Output skew: 15ps (maximum) • Part-to-part skew: 600ps (maximum) • Additive p

文件：372.16 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：026N10NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：960.61 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：026N15N6；Package：PG-TO263-7；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.01369 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：026N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：994.22 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：026N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.06267 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：026N12N6；Package：PG-HSOF-8；OptiMOS™ 6 Power ‑Transistor, 120 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x R product (FOM) DS(on) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb‑free lead platin

文件：1.17186 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：026N12N6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and Top side cooling • Pb-free

文件：1.46154 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：026BI01L；Package：SOIC；Differential-to-LVCMOS/LVTTL Fanout Buffer

文件：176.4 Kbytes 页数：15 Pages

IDT