StrongIRFET ™ 2 单 N 沟道功率 MOSFET 40 V，采用 TO-220 封装

\n优势:\n• Multi-vendor compatibility\n• Right-fit products\n• Supports a wide variety of applications\n• Standard pinout allows for drop-in replacement\n• Increased current carrying capability\n• Ease of manufacturing;

Infineon

英飞凌

丝印：026N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：994.22 Kbytes 页数：11 Pages

INFINEON

英飞凌

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：TRENCH PG-TO220-3

INFINEON

英飞凌

TO-220

INFINEON/英飞凌

上传：深圳市凌旭科技有限公司

TO-220

INFINEON

英飞凌

上传：深圳市壹芯创科技有限公司