丝印：029N15N6；Package：PG-TO220-3；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：898.61 Kbytes 页数：11 Pages

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OptiMOS ™ 6 功率 MOSFET 150 V 正常电平，TO-220 封装

OptiMOS™ 6 power MOSFET 150 V normal level in TO-220 package • 43% lower RDS(on) than OptiMOS™ 5\n• 20% lower FOMg than OptiMOS™ 5\n• Industry's lowest Qrr in 150 V\n• Improved diode softness vs OptiMOS™ 5\n• Tight Vgs(th) spread of +/-500 mV\n• High avalanche ruggedness\n• Through-hole package\n• Max Tj of 175°C\n\n优势:\n• Low conduction and switching;

Infineon

英飞凌

OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：727.11 Kbytes 页数：11 Pages

Infineon

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TO-220

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上传：深圳市壹芯创科技有限公司

TO220-3

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上传：深圳市凌旭科技有限公司