OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：350.45 Kbytes 页数：11 Pages

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英飞凌

OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：350.45 Kbytes 页数：11 Pages

INFINEON

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丝印：45N10N3G；Package：TO-220；100 V N-Channel MOSFET

Features • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectification • VDS • ID=137A • RDS(ON) (at VGS=10V)

文件：1.03681 Mbytes 页数：9 Pages

UMW

友台半导体

OptiMOS?? Power-Transistor

文件：532.15 Kbytes 页数：11 Pages

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OptiMOS?? Power-Transistor

文件：532.15 Kbytes 页数：11 Pages

INFINEON

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MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3

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