丝印：072N10N；Package：PG-TO262-3；OptiMOS3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：317.03 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：072N10N；Package：TO-220；100V N-Channel MOSFET

Features * N-channel, normal level * Very low on-resistance Rps(on) *175 °C operating temperature * Pb-free lead plating; RoHS compliant * Ideal for high-frequency switching and synchronous rectification * ps =100V * Ip (at Vgs=10V)=80A * Rps(on)(at Ves=10V)

文件：693.81 Kbytes 页数：9 Pages

UMW

友台半导体

MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件：338.13 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：305.25 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：317.03 Kbytes 页数：10 Pages

Infineon

英飞凌