IPP120N04S3-02

Marking：3PN0402；Package：PG-TO220-3-1；OptiMOS-T Power-Transistor

Features •N-channel-Enhancementmode •AutomotiveAECQ101qualified •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenpackage(RoHScompliant) •UltralowRds(on) •100Avalanchetested

IPP120N04S3-02

20V-650V汽车级MOSFET; • N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green package (RoHS compliant)\n • Ultra low Rds(on)\n • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 40V (on)\n • highest current capability\n • lowest switching and conduction power losses for highest thermal efficiency\n • robust packages with superior quality and reliability\n • Optimized total gate charge enables smaller driver output stages\n;

IPB120N04S3-02

OptiMOS-TPower-Transistor

Features •N-channel-Enhancementmode •AutomotiveAECQ101qualified •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenpackage(RoHScompliant) •UltralowRds(on) •100Avalanchetested

IPI120N04S3-02

OptiMOS-TPower-Transistor

Features •N-channel-Enhancementmode •AutomotiveAECQ101qualified •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenpackage(RoHScompliant) •UltralowRds(on) •100Avalanchetested