首页 >IPP60R125C6>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IPP60R125C6 | N-Channel MOSFET Transistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.125Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustd | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
IPP60R125C6 | MOSFET Metal Oxide Semiconductor Field Effect Transistor Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
IPP60R125C6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
IPP60R125C6 | Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.125Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustd | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤125mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications •Loadswitch •Powermanagement | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
MOSFETMetalOxideSemiconductorFieldEffectTransistor Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
MOSFETMetalOxideSemiconductorFieldEffectTransistor Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤125mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
MOSFETMetalOxideSemiconductorFieldEffectTransistor Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号:
IPP60R125C6
- 功能描述:
MOSFET 600V CoolMOS C6 Power Transistor
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
21+ |
TO220-3 |
20000 |
原装现货假一罚十 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
TO-220 |
16857 |
原装进口假一罚十 |
询价 | ||
INFINEON/英飞凌 |
21+ |
PG-TO220-3 |
36800 |
进口原装现货 假一赔十 |
询价 | ||
INFINEON/英飞凌 |
1839+ |
PG-TO220-3 |
2300 |
进口原装假一赔十支持含税 |
询价 | ||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
英飞翎 |
17+ |
TO-220 |
31518 |
原装正品 可含税交易 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
TO220 |
2380 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-220 |
13300 |
全新原装现货 |
询价 | ||
Infineon(英飞凌) |
2023+ |
PG-TO220-3 |
4550 |
全新原装正品 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 |
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