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IPP60R125C6

N-Channel MOSFET Transistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.125Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustd

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP60R125C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP60R125C6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP60R125C6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IIPP60R125C6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.125Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustd

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPW60R125C6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤125mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R125C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPA60R125C6

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications •Loadswitch •Powermanagement

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R125C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPA60R125C6

MOSFETMetalOxideSemiconductorFieldEffectTransistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB60R125C6

MOSFETMetalOxideSemiconductorFieldEffectTransistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB60R125C6

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB60R125C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB60R125C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R125C6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤125mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW60R125C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R125C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPX60R125C6

MOSFETMetalOxideSemiconductorFieldEffectTransistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    IPP60R125C6

  • 功能描述:

    MOSFET 600V CoolMOS C6 Power Transistor

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
21+
TO220-3
20000
原装现货假一罚十
询价
INFINEON/英飞凌
2021+
TO-220
16857
原装进口假一罚十
询价
INFINEON/英飞凌
21+
PG-TO220-3
36800
进口原装现货 假一赔十
询价
INFINEON/英飞凌
1839+
PG-TO220-3
2300
进口原装假一赔十支持含税
询价
Infineon(英飞凌)
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
英飞翎
17+
TO-220
31518
原装正品 可含税交易
询价
INFINEON/英飞凌
21+23+
TO220
2380
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
INFINEON/英飞凌
21+
TO-220
13300
全新原装现货
询价
Infineon(英飞凌)
2023+
PG-TO220-3
4550
全新原装正品
询价
Infineon(英飞凌)
23+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
更多IPP60R125C6供应商 更新时间2024-10-14 10:10:00