首页 >IPP600N25N3=FS1>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Highfrequencyswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤60mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
OptiMOSTM3Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Highfrequencyswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤60mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
OptiMOSTM3Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
24+ |
NA |
3408 |
进口原装正品优势供应 |
询价 | ||
INFINEON |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
Infineon |
20+ |
NA |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Infineon(英飞凌) |
2447 |
PG-TO220-3 |
105000 |
500个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
Infineon |
22+ |
NA |
4822 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON |
23+ |
TDSON-8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 |
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