型号：IPI072N10N3G；Package：PG-TO220-3；OptiMOS3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：317.03 Kbytes 页数：10 Pages

英飞凌

型号：IPP072N10N3G；Package：TO-220；100V N-Channel MOSFET

Features * N-channel, normal level * Very low on-resistance Rps(on) *175 °C operating temperature * Pb-free lead plating; RoHS compliant * Ideal for high-frequency switching and synchronous rectification * ps =100V * Ip (at Vgs=10V)=80A * Rps(on)(at Ves=10V)

文件：693.81 Kbytes 页数：9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

型号：IPP072N10N3G；Package：PG-TO262-3；OptiMOS3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：317.03 Kbytes 页数：10 Pages

英飞凌

型号：072N10N；OptiMOS3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：317.03 Kbytes 页数：10 Pages

英飞凌

型号：072N10N；100V N-Channel MOSFET

Features * N-channel, normal level * Very low on-resistance Rps(on) *175 °C operating temperature * Pb-free lead plating; RoHS compliant * Ideal for high-frequency switching and synchronous rectification * ps =100V * Ip (at Vgs=10V)=80A * Rps(on)(at Ves=10V)

文件：693.81 Kbytes 页数：9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司