丝印：075N15N；Package：PG-TO262-3；3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：744.54 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：075N15N；Package：PG-TO220-3；3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：744.54 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：075N15NS；Package：TO-220AB-L；150V N-Channel MOSFET

Feature:  RDS(ON) Max, VGS@10V: 7.5mΩ  RDS(ON) Max, VGS@7V: 9mΩ  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AB-L package  Termi

文件：572.92 Kbytes 页数：7 Pages

PANJIT

強茂