IPI075N15N3G

Marking：075N15N；Package：PG-TO262-3；3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPP075N15N3G

Marking：075N15N；Package：PG-TO220-3；3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

PSMP075N15NS1

Marking：075N15NS；Package：TO-220AB-L；150V N-Channel MOSFET

Feature: RDS(ON)Max,VGS@10V:7.5mΩ RDS(ON)Max,VGS@7V:9mΩ HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-220AB-Lpackage Termi