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SPA07N65C3

Marking:07N65C3;Package:PG-TO220-3;Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScompliant •Quali

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI07N65C3

Marking:07N65C3;Package:PG-TO262-3;Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScompliant •Quali

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP07N65C3

Marking:07N65C3;Package:PG-TO220;Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScompliant •Quali

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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