首页 >SPA07N65C3>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SPA07N65C3 | Marking：07N65C3；Package：PG-TO220-3；Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScompliant •Quali | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPA07N65C3 | isc N-Channel MOSFET Transistor •FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SPA07N65C3 | Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPA07N65C3 | New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScompliant •Quali | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScompliant •Quali | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
SPA07N65C3
- 功能描述：
MOSFET COOL MOS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO220 |
32360 |
INFINEON/英飞凌全新特价SPA07N65C3即刻询购立享优惠#长期有货 |
询价 | ||
INF进口原 |
17+ |
TO-220F |
6200 |
询价 | |||
INFINEON |
2016+ |
TO-220F |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
INFINEON |
23+ |
TO-220F |
7936 |
询价 | |||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INFINEON |
23+ |
TO-220F |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
INFINEON |
25+23+ |
TO220F |
12537 |
绝对原装正品全新进口深圳现货 |
询价 | ||
INFINEON |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
INFINEON |
23+ |
TO-220属封 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
INFINEON/英飞凌 |
2447 |
TO-220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
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