Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：299.15 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：07N65C3；Package：PG-TO262-3；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance ● PG-TO-220-3: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS compliant • Quali

文件：396.38 Kbytes 页数：15 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：331.83 Kbytes 页数：2 Pages

ISC

无锡固电

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：3.03035 Mbytes 页数：15 Pages

Infineon

英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

650V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. Replacement for 650V CoolMOS™ C3 is CoolMOS™ P7. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌