丝印：07N04NM6；Package：PG-TDSON-8FL；MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features • Optimized for Low Voltage Drives applications • Optimized for Battery Powered application • Optimized for Synchronous application • Very low on-resistance RDS(on) • 100% avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halo

文件：1.42372 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：07N04NM6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 40 V

文件：1.42302 Mbytes 页数：12 Pages

Infineon

英飞凌