丝印：07N04NM6；Package：PG-TDSON-8FL；MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features • Optimized for Low Voltage Drives applications • Optimized for Battery Powered application • Optimized for Synchronous application • Very low on-resistance RDS(on) • 100% avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halo

文件：1.42372 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：07N04NM6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 40 V

文件：1.42302 Mbytes 页数：12 Pages

INFINEON

英飞凌

OptiMOS ™ 6 功率 MOSFET 40 V 正常电平，采用最新的英飞凌技术，采用 SuperSO8 封装

\n优势:\n• Normal gate drive offers immunity to false turn-on in noisy environments\n• Reduced switching losses due to low gate charge\n• Suitable for FOC (field-oriented control) and DTC (direct torque control) motor control techniques;

Infineon

英飞凌

MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features • Optimized for Low Voltage Drives applications • Optimized for Battery Powered application • Optimized for Synchronous application • Very low on-resistance RDS(on) • 100% avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halo

文件：1.42372 Mbytes 页数：12 Pages

INFINEON

英飞凌