丝印：010N06N；Package：PG-TSON-8-3；OptiMOSTM5 Power-Transistor, 60 V

Features • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Higher solder joint reliability due to enlarged source interconnection

文件：988.7 Kbytes 页数：11 Pages

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EiceDRIVER™ F3 Enhanced (1ED332x) – Single- channel isolated gate driver family with short-circuit protection

Features  For up to 2300 V IGBTs, SiC and Si MOSFETs  +6 A / -8.5 A typical sinking and sourcing peak output current  Precise VCEsat detection (DESAT) with fault output  Soft turn-off after desaturation detection  Active Miller Clamp  40 V absolute maximum output supply voltage  85 n

文件：1.79535 Mbytes 页数：8 Pages

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EiceDRIVER™ F3 Enhanced (1ED332x) – Singlechannel isolated gate driver family with short-circuit protection

Features  For up to 2300 V IGBTs, SiC and Si MOSFETs  +6 A / -8.5 A typical sinking and sourcing peak output current  Precise VCEsat detection (DESAT) with fault output  Soft turn-off after desaturation detection  Active Miller Clamp  40 V absolute maximum output supply voltage  85 n

文件：1.79542 Mbytes 页数：8 Pages

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OptiMOS ™ 5 单 N 沟道功率 MOSFET 60 V、1.05 mΩ、330 A，采用 SSO8 封装

\n优势:\n• Lower conduction losses, higher power density and efficiency\n• Less paralleling for system cost reduction\n• Reduced overshoot\n• Excellent thermal behavior;

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