DC-DC Converter

文件：460.92 Kbytes 页数：3 Pages

XPPOWER

丝印：030N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.32902 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：03012N6；Package：PG-TSON-8；OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.037079 Mbytes 页数：11 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=194A@ TC=25℃ ·Drain Source Voltage- VDSS= 120V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver·Power Tools ·UPS ·Motor Control

文件：375.91 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：032N12L6；Package：PG-TDSON-8FL；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, logic level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.37515 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：033N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.44799 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：035N10LF；Package：PG-TDSON-8FL；OptiMOSTM 5 Linear FET, 100 V

Features • Ideal for hot-swap, battery protection and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.35965 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：35N10LF2；Package：PG-TDSON-8FL；OptiMOSTM 5 Linear FET 2, 100 V

Features • Ideal for hot-swap, battery protection and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.35967 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：037N03LI；Package：PG-TDSON-8；OptiMOSTMPower-MOSFET,30V

Features •OptimizedSyncFETforhighperformancebuckconverter •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.39563 Mbytes 页数：13 Pages

Infineon

英飞凌

OptiMOSTMPower-MOSFET,30V

Features •OptimizedSyncFETforhighperformancebuckconverter •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.39563 Mbytes 页数：13 Pages

Infineon

英飞凌