丝印：033N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.44799 Mbytes 页数：14 Pages

Infineon

英飞凌

N-Channel Power MOSFET

Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.\n Compared to the previous technology, the ISC033N03LF2S achieves up to 40& • General purpose products\n• Excellent robustness\n• Superior price/performance ratio\n• Broad availability at distributors\n• Standard packages and pin-out\n• High manufacturing & supply standards\n\n优势:\n• Addresses a wide range of applications\n• Reliable performance\n• High quality and competit;

Infineon

英飞凌

MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.26494 Mbytes 页数：12 Pages

Infineon

英飞凌

MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：837.73 Kbytes 页数：12 Pages

Infineon

英飞凌