丝印：12N04LM6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 40 V

Features • N-channel • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Optimized for syncronous application • 175 °C rated

文件：1.53462 Mbytes 页数：12 Pages

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英飞凌

OptiMOSTM6Power-Transistor,40V

Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforsyncronousapplication •175°Crated

文件：1.53619 Mbytes 页数：12 Pages

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英飞凌

OptiMOS ™ 6 功率 MOSFET 40 V 逻辑电平，采用 SuperSO8 封装

\n优势:\n• 灵活的栅极驱动\n• 最高系统效率\n• 增加运行裕度\n• 稳健、可靠的性能\n• 环保型产品\n• 增加功率密度和极低的电压过冲;

Infineon

英飞凌

OptiMOSTM6Power-Transistor,40V

Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforsyncronousapplication •175°Crated

文件：1.53619 Mbytes 页数：12 Pages

INFINEON

英飞凌