丝印：052N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.44848 Mbytes 页数：14 Pages

INFINEON

英飞凌

StrongIRFET ™ 2 功率 MOSFET 30 V，采用 SuperSO8 5x6 封装

Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 5.2 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.\n Compared to the previous technology, the ISC052N03LF2S achieves up to 40& • General purpose products\n• Excellent robustness\n• Superior price/performance ratio\n• Broad availability at distributors\n• Standard packages and pin-out\n• High manufacturing & supply standards\n\n优势:\n• Addresses a wide range of applications\n• Reliable performance\n• High quality and competit;

Infineon

英飞凌

汽车电子连接器

SAMTEC/砷泰

上传：天津市博通航睿技术有限公司

DIP28 |

ISD |

上传：深圳市卓越微芯电子有限公司

DIP

ISD

上传：深圳市卓越微芯电子有限公司