丝印：080N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.34179 Mbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS ™ 6 功率 MOSFET 100 V 正常电平，采用 SuperSO8 封装

\n优势:\n• Low conduction losses\n• Low switching losses\n• Fast turn on and off\n• Less paralleling required\n• Robust reliable performance\n• Environmentally friendly\n• Less paralleling required;

Infineon

英飞凌

OptiMOSTM 6 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.39135 Mbytes 页数：11 Pages

Infineon

英飞凌

汽车电子连接器

SAMTEC/砷泰

上传：天津市博通航睿技术有限公司

DIP28 |

ISD |

上传：深圳市卓越微芯电子有限公司