丝印：079N15N6；Package：PG-TDSON-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.70152 Mbytes 页数：14 Pages

Infineon

英飞凌

N-Channel Power MOSFET

OptiMOS™ 6 power MOSFET 150 V normal level in SuperSO8 package • Very low RDS(on)\n• 20% lower FOMg than OptiMOS™ 5\n• Industry's lowest Qrr in 150 V\n• Improved diode softness vs OptiMOS™ 5\n• Tight Vgs(th) spread of +/-500 mV\n• High avalanche ruggedness\n• Max Tj of 175°C\n\n优势:\n• Low conduction and switching losses\n• Stable operation with improved EMI;

Infineon

英飞凌

SAMTEC/砷泰
汽车电子连接器

SAMTEC/砷泰

上传：天津市博通航睿技术有限公司

ISD |
DIP28 |

ISD |

上传：深圳市卓越微芯电子有限公司

ISD
DIP

ISD

上传：深圳市卓越微芯电子有限公司