丝印：073N12L6；Package：PG-TDSON-8；OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, logic level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.25658 Mbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS ™ 6 功率 MOSFET 逻辑电平 120 V，采用 SuperSO8 封装

\n优势:\n• Very low on-resistance\n• Very low reverse recovery charge\n• Excellent gate charge x RDS(on)\n• High avalanche energy rating\n• 175°C junction temperature rating\n• Pb-free plating\n• RoHS compliant\n• Halogen-free\n• MSL1 classified;

Infineon

英飞凌

OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, logic level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.25658 Mbytes 页数：11 Pages

INFINEON

英飞凌

汽车电子连接器

SAMTEC/砷泰

上传：天津市博通航睿技术有限公司

DIP28 |

ISD |

上传：深圳市卓越微芯电子有限公司