IPP07N03LBG芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPP07N03LBG	文件：275.93 Kbytes Page：9 Pages	丝印：07N03LB；Package：PG-TO220-3-1；OptiMOS2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt ra 文件：275.93 Kbytes 页数：9 Pages	Infineon 英飞凌	Infineon
07N03LB	文件：275.93 Kbytes Page：9 Pages	OptiMOS2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt ra 文件：275.93 Kbytes 页数：9 Pages	Infineon 英飞凌	Infineon
07N03LBG	文件：275.93 Kbytes Page：9 Pages	OptiMOS2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt ra 文件：275.93 Kbytes 页数：9 Pages	Infineon 英飞凌	Infineon

更多07N03LB供应商更新时间2025-9-21 16:30:00