OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id

文件：426.96 Kbytes 页数：11 Pages

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英飞凌

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id

文件：694.82 Kbytes 页数：11 Pages

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英飞凌

OptiMOS3 Power-Transistor

文件：737.83 Kbytes 页数：11 Pages

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N-Channel MOSFET Transistor

• DESCRITION • High frequency switching • FEATURES • Static drain-source on-resistance: RDS(on)≤60mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.23 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS3 Power-Transistor

文件：737.83 Kbytes 页数：11 Pages

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英飞凌

OptiMOS3 Power-Transistor

文件：737.83 Kbytes 页数：11 Pages

INFINEON

英飞凌