IPP80N08S2L-07

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IPP80N08S2L-07

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IPP80N08S2L-07

OptiMOS짰 Power-Transistor

IPP80N08S2L-07

OptiMOS??Power-Transistor

IPP80N08S2L-07

isc N-Channel MOSFET Transistor

IPP80N08S2L-07

20V-650V汽车级MOSFET; • N-channel Logic Level - Enhancement mode\n• Automotive AEC Q101 qualified\n• MSL1 up to 260°C peak reflow\n• 175°C operating temperature\n• Green package (lead free)\n• Ultra low Rds(on)\n• 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 75V (on)  in planar technology\n• highest current capability\n• lowest switching and conduction power losses for highest thermal efficiency\n• robust packages with superior quality and reliability\n• Optimized total gate charge enables smaller driver output stages\n;

IPP80N08S2L-07_14

OptiMOS??Power-Transistor