N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 80A@ TC=25℃ · Drain Source Voltage -VDSS= 75V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.1mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：667.04 Kbytes 页数：6 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 80A@ TC=25℃ · Drain Source Voltage -VDSS= 75V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.1mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：621.16 Kbytes 页数：6 Pages

ISC

无锡固电

OptiMOS짰 Power-Transistor

文件：154.91 Kbytes 页数：8 Pages

Infineon

英飞凌

OptiMOS??Power-Transistor

文件：311.01 Kbytes 页数：9 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件：369.62 Kbytes 页数：2 Pages

ISC

无锡固电

75V、N沟道、最大7.1mΩ、汽车MOSFET、TO-220、OptiMOS ™

• N-channel Logic Level - Enhancement mode\n• Automotive AEC Q101 qualified\n• MSL1 up to 260°C peak reflow\n• 175°C operating temperature\n• Green package (lead free)\n• Ultra low Rds(on)\n• 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 75V (on)  in planar technology\n• highest current ;

Infineon

英飞凌

OptiMOS??Power-Transistor

文件：311.01 Kbytes 页数：9 Pages

Infineon

英飞凌