650V CoolMOS C6 CFD Power Transistor

650V CoolMOS C6 CFDA Power Transistor Applications 650V CoolMOS CFD is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom

文件：6.65181 Mbytes 页数：20 Pages

Infineon

英飞凌

650V CoolMOS C6 CFD Power Transistor

650V CoolMOS C6 CFDA Power Transistor Applications 650V CoolMOS CFD is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom

文件：6.65181 Mbytes 页数：20 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

文件：338.66 Kbytes 页数：2 Pages

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

650V CoolMOS CFDA Power Transistor Applications    650V CoolMOS CFDA is designed for switching applications.

文件：1.7849 Mbytes 页数：15 Pages

Infineon

英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

650V CoolMOS ™ CFD2 的替代品是 600V CoolMOS ™ CFD7 650V CoolMOS ™ CFD2 是英飞凌第二代市场领先的高压 CoolMOS ™ MOSFET，带有集成快速体二极管。CFD2 器件是 600 V CFD 的后继产品，能效更高。与竞争对手的器件相比，更柔和的换向特性以及更好的 EMI 特性使该产品具有明显的优势。 • 集成快速体二极管，650 V\n• 硬开关中的低电压过冲\n• 显著降低 Q G\n• 更紧密的 R DS(on)max 至 R DS(on)typ 窗口\n• 易于设计\n•;

Infineon

英飞凌

20V-650V汽车级MOSFET

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;

Infineon

英飞凌