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IPP60R600P6

Metal Oxide Semiconductor Field Effect Transistor

600VCoolMOS™P6PowerTransistor Applications   PFCstages,hardswitchingPWMstagesandresonantswitchingstages   fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom   andUPS.

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP60R600P6

N-Channel MOSFET Transistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdev

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPD60R600P6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP60R600P6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdev

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R600P6

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicatio

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R600P6

MetalOxideSemiconductorFieldEffectTransistor

600VCoolMOS™P6PowerTransistor Applications   PFCstages,hardswitchingPWMstagesandresonantswitchingstages   fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom   andUPS.

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPA60R600P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB60R600P6

MetalOxideSemiconductorFieldEffectTransistor

600VCoolMOS™P6PowerTransistor Applications   PFCstages,hardswitchingPWMstagesandresonantswitchingstages   fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom   andUPS.

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB60R600P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB60R600P6

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IPP60R600P6

  • 功能描述:

    MOSFET 600V CoolMOS P6 MOSFET 600 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINE0N
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINEO
24+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
INFINEON/英飞凌
23+
TO-220
50000
全新原装正品现货,支持订货
询价
INFINEON
21+
TO-220
10000
原装现货假一罚十
询价
INFINEON/英飞凌
2022+
TO-220
50000
原厂代理 终端免费提供样品
询价
INFINEON
14+
TO-220
2700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INFINEON/英飞凌
23+
TO-220
11220
英飞凌优势原装IC,高效BOM配单。
询价
INFINEON
23+
TO-220
16988
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
INFINEON
23+
TO-220
5200
原厂原装正品
询价
INFINEON/英飞凌
23+
TO-220
89630
当天发货全新原装现货
询价
更多IPP60R600P6供应商 更新时间2025-7-21 14:48:00