IPP65R190CFD

N-Channel MOSFET Transistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf

IPP65R190CFD

650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

IPP65R190CFD

Marking：65F6190；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

IPP65R190CFD7

Marking：65R190F7；Package：PG-TO220-3；650V CoolMOSª CFD7 SJ Power Device

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature

IPP65R190CFD7A

Marking：65A190F7；Package：PG-TO220-3；650V CoolMOSª CFD7A SJ Power Device

Features •Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr •LowestFOMRDS(on)*QgandRDS(on)*Eoss •100avalanchetested •Best-in-classRDS(on)inSMDandTHDpackages

IPP65R190CFDA

Metal Oxide Semiconductor Field Effect Transistor