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型号	下载订购	功能描述	制造商上传企业	LOGO
IPA65R190CFD	文件：3.83053 Mbytes Page：20 Pages	丝印：65F6190；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages	Infineon 英飞凌	Infineon
IPB65R190CFD	文件：3.83053 Mbytes Page：20 Pages	丝印：65F6190；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages	Infineon 英飞凌	Infineon
IPI65R190CFD	文件：3.83053 Mbytes Page：20 Pages	丝印：65F6190；Package：PG-TO262；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages	Infineon 英飞凌	Infineon
IPP65R190CFD	文件：3.83053 Mbytes Page：20 Pages	丝印：65F6190；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages	Infineon 英飞凌	Infineon
IPW65R190CFD	文件：3.83053 Mbytes Page：20 Pages	丝印：65F6190；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages	Infineon 英飞凌	Infineon
65F6190	文件：3.83053 Mbytes Page：20 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages	Infineon 英飞凌	Infineon

详细参数

型号：
65F6190
功能描述：
MOSFET CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	IPP65R190CFD	英飞凌	24+	TO-220	800	全新原装正品,公司现货。	询价
深圳瞄钧科技有限公司	IPP65R190CFD	INFINEON/英飞凌	24+	TO-220	10000	只做进口原装力挺实单	询价
深圳市中联芯电子有限公司	IPP65R190CFD	INFINEON/英飞凌	24+	TO-220	10000	只做原装欢迎含税交易,假一赔十,放心购买	询价
中天科工半导体（深圳）有限公司	IPP65R190CFD	INFINEON/英飞凌	25+	TO-220	32000	INFINEON/英飞凌全新特价IPP65R190CFD即刻询购立享优惠#长期有货	询价
深圳市昌和盛利电子有限公司	IPP65R190CFD	INFINEON	23+	TO220	280000	100%原装现货	询价
深圳市英科美电子有限公司	IPP65R190CFD	INFINEON/英飞凌	24+	TO-220	17595	原装进口假一罚十	询价
深圳市亿智腾科技有限公司	IPP65R190CFD	INFINEON/英飞凌	24+	TO-220F	3580	原装现货/15年行业经验欢迎询价	询价
深圳市能元时代电子有限公司	IPP65R190CFD	INFINEON/英飞凌	23+	na	28650	主营品牌深圳百分百原装现货假一罚十绝对价优	询价
深圳市坤融电子科技有限公司	IPP65R190CFD	INFINEON/英飞凌	24+	TO-220	5345	只做原厂渠道可追溯货源	询价
深圳市品优时代科技有限公司	IPP65R190CFD	INFINEON	2019	TO-220	19700	INFINEON品牌专业原装优质	询价

更多65F6190供应商更新时间2025-9-10 17:27:00

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