| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：65F6190；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6190；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6190；Package：PG-TO262；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6190；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6190；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | ||
65F6190 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic 文件：3.83053 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon |
详细参数
- 型号：
65F6190
- 功能描述：
MOSFET CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
英飞凌 |
24+ |
TO-220 |
800 |
全新原装正品,公司现货。 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-220 |
10000 |
只做进口原装力挺实单 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-220 |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
询价 | ||
INFINEON/英飞凌 |
25+ |
TO-220 |
32000 |
INFINEON/英飞凌全新特价IPP65R190CFD即刻询购立享优惠#长期有货 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-220F |
3580 |
原装现货/15年行业经验欢迎询价 |
询价 | ||
INFINEON/英飞凌 |
23+ |
na |
28650 |
主营品牌深圳百分百原装现货假一罚十绝对价优 |
询价 | ||
INFINEON |
2019 |
TO-220 |
19700 |
INFINEON品牌专业原装优质 |
询价 | ||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-220 |
25000 |
正规渠道,只有原装! |
询价 | ||
INFINEON |
23+ |
TO-220 |
10000 |
原装优质现货订货渠道商 |
询价 |
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