| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：65F6660；Package：PG-TO262；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu 文件：4.46997 Mbytes 页数：21 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6660；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu 文件：4.46997 Mbytes 页数：21 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6660；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu 文件：4.46997 Mbytes 页数：21 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6660；Package：PG-TO252；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu 文件：4.46997 Mbytes 页数：21 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6660；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu 文件：4.46997 Mbytes 页数：21 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6660；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu 文件：4.46997 Mbytes 页数：21 Pages | Infineon 英飞凌 | Infineon | ||
65F6660 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu 文件：4.46997 Mbytes 页数：21 Pages | Infineon 英飞凌 | Infineon |
详细参数
- 型号：
65F6660
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
7073 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON |
21+ |
TO247 |
10000 |
原装现货假一罚十 |
询价 | ||
INFINEON/英飞凌 |
2022+ |
TO-247 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO247 |
9990 |
原装正品，支持实单 |
询价 | ||
INFINEON |
1237+ |
TO247 |
7730 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
INFINEON/英飞凌 |
23+ |
TO247 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
询价 |
相关芯片丝印
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相关库存
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- DAC60508MYZFR
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