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IP165R660CFD中文资料英飞凌数据手册PDF规格书

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厂商型号

IP165R660CFD

功能描述

Metal Oxide Semiconductor Field Effect Transistor

丝印标识

65F6660

封装外壳

PG-TO262

文件大小

4.46997 Mbytes

页面数量

21

生产厂商

INFINEON

中文名称

英飞凌

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2026-2-10 8:01:00

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IP165R660CFD价格和库存,欢迎联系客服免费人工找货

IP165R660CFD规格书详情

描述 Description

CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler

特性 Features

• Ultra-fast body diode

• Very high commutation ruggedness

• Extremely low losses due to very low FOM Rdson*Qg and Eoss

• Easy to use/drive

​​​​​​​• Qualified for industrial grade applications according to JEDEC 

   (J-STD20 and JESD22)

• Pb-free plating, Halogen free mold compound

Applications

  650V CoolMOS™ CFD2 is especially suitable for resonant switching PWM

  stages for e.g. PC Silverbox, LCD TV, Lighting, Server, Telecom, and Solar.

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