首页 >IPD65R660CFD>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPD65R660CFD | 650V CoolMOS CFD Power Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
IPD65R660CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
IPD65R660CFD | N-Channel MOSFET Transistor •DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
650VN-ChannelSuperJunctionMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
650VN-ChannelSuperJunctionMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-ChannelMOSFETTransistor •DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤660mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
IPD65R660CFD
- 功能描述：
MOSFET COOLM 650V CFD PWR TRANS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
20+ |
TO-252 |
16300 |
终端可免费提供样品,欢迎咨询 |
询价 | ||
Infineon(英飞凌) |
23+ |
标准封装 |
7577 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
INFINEON |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
IR |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-252 |
60000 |
原装正品进口现货 |
询价 | ||
INFINEON |
22+ |
TO252-3 |
6850 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
英飞翎 |
17+ |
DPAK(TO-252) |
31518 |
原装正品 可含税交易 |
询价 | ||
INFINEON/英飞凌 |
726222 |
询价 | |||||
英飞凌 |
15+ |
SOT-252 |
5000 |
全新原装,公司现货 |
询价 | ||
INFINEON |
2017+ |
TO-252 |
35556 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 |
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