650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件：6.53687 Mbytes 页数：20 Pages

Infineon

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丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.53 Kbytes 页数：2 Pages

ISC

无锡固电

Metal Oxide Semiconduvtor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件：6.53687 Mbytes 页数：20 Pages

Infineon

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丝印：65F6190；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件：3.83053 Mbytes 页数：20 Pages

Infineon

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丝印：65A190F7；Package：PG-TO263-3；650V CoolMOS짧 CFD7A SJ Power Device

650V CoolMOS™ CFD7A SJ Power Device 650V CoolMOS™ CFD7A is Infineons latest generation of market leading automotive qualified high voltage CoolMOS™ MOSFETs. Potential applications Suitable for PFC and DC-DC stages for: • Unidriectional and bidirectional DC-DC converters, • On-Board battery Ch

文件：1.41156 Mbytes 页数：14 Pages

Infineon

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Metal Oxide Semiconductor Field Effect Transistor

文件：2.19785 Mbytes 页数：16 Pages

Infineon

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500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7\n 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation • 650V technology with integrated fast body diode\n• Limited voltage overshoot during hard commutation\n• Significant Qg reduction compared to 600V CFD technology\n• Tighter RDS(on) max to RDS(on) typ window\n• Easy to design-in\n• Lower price compared to 600V CFD technology\n\n优势:\n• Low switching ;

Infineon

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650V CoolMOS ™ N沟道汽车SJ功率MOSFET CFD7A

\n优势:\n• 在满足汽车寿命要求方面具有行业最高可靠性\n• 实现更高功率密度设计\n• 可扩展设计用于 PFC 和 DC-DC 级\n• 提供丰富的产品组合;

Infineon

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650V、N 通道、最大 190 mΩ、汽车 MOSFET、D2PAK、CoolMOS ™ CFDA

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;

Infineon

英飞凌